PART |
Description |
Maker |
AGR19030EF |
30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
AGR19090E AGR19090EF AGR19090EU |
90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
MW5IC2030MBR1 MW5IC2030GMBR1 |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
|
TQ3M31 |
832-894 MHz & 1930-1990 MHz Dual Band LNA From old datasheet system Dual Band LNA: 2.8V, Cellular and PCS Band CDMA/AMPS LNA IC
|
TRIQUINT[TriQuint Semiconductor] TriQuint Semiconductor,Inc.
|
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
MHL19926 |
MHL19926 1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier
|
Motorola
|
DSI-253R0.820G DS1-20L1.960G |
810 MHz - 830 MHz RF/MICROWAVE ISOLATOR 1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
HITACHI METALS LTD
|
PH1920-45 |
Wireless Bipolar Power Transistor 45W, 1930-1990 MHz
|
M/A-COM Technology Solutions, Inc.
|
PTFA190451E PTFA190451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz
|
Infineon Technologies AG
|
PTFB193404F |
Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz
|
Infineon Technologies AG
|
RFP-1500-19-50 RFP-1500-9-50 |
1930 MHz - 1990 MHz 50 ohm RF/MICROWAVE TERMINATION 925 MHz - 960 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Anaren, Inc. ANAREN INC
|